3:00 PM - 3:30 PM
[15p-1D-5] Regularly Arrayed InGaN/GaN-Based Nanocolumns and the Application to Emitters
Keywords:nitride semiconductor,nanocolumn,InGaN emitters
In this talk, we describe the crystal growth of InGaN/GaN-based regularly arrayed nanocolumns and their applications to light emitters. After talking about selective area growth (SAG) of thin nanocolumns with the column diameter less than 50 nm, we discuss about four-color integrated nanocolumn LEDs, yellow-emitting nanocolumn LEDs with the high directional radiation beam, and the fundamental experiment of speckle-noise free nanocolumn lasers. And for GaN nanocolumns on Si substrate prepared by SAG, dislocation filtering effect, and flip-chip mounting of nanocolumns LEDs are discussed.