[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-5] Regularly Arrayed InGaN/GaN-Based Nanocolumns and the Application to Emitters

〇Katsumi Kishino^1,2, Shunsuke Ishizawa¹, Hiroaki Hayashi¹, Kojo Yamano¹, Takao Oto¹, Tatsuya Kano¹ (1.Sophia Univ., 2.Sophia Nanotech. Center)

Keywords:nitride semiconductor,nanocolumn,InGaN emitters

In this talk, we describe the crystal growth of InGaN/GaN-based regularly arrayed nanocolumns and their applications to light emitters. After talking about selective area growth (SAG) of thin nanocolumns with the column diameter less than 50 nm, we discuss about four-color integrated nanocolumn LEDs, yellow-emitting nanocolumn LEDs with the high directional radiation beam, and the fundamental experiment of speckle-noise free nanocolumn lasers. And for GaN nanocolumns on Si substrate prepared by SAG, dislocation filtering effect, and flip-chip mounting of nanocolumns LEDs are discussed.