[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-8] Optical properties of semipolar AlGaN quantum wells grown by MOVPE on AlN bulk substrates

Shuhei Ichikawa¹, Mitsuru Funato¹, 〇Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:AlN,AlGaN quantum well,semipolar plane

We are now going to be able to fabricate AlGaN quantum wells (QWs) oriented to various crystal planes thanks to the development of AlN bulk substrates. In this symposium, the growth of semipolar AlN and AlGaN QWs will be described based on metalorganic vapor phase epitaxy (MOVPE), and optical properties of semipolar AlGaN QWs will be reported putting emphasis on the achievements of narrow linewidths and high radiative recombination rates in photoluminescence due to the suppression of polarized electric fields.