Electronic and optical characteristics of an <em>m</em>-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer

Kazunobu Kojima

Presentation information

Symposium

Symposium » Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

Tue. Sep 15, 2015 1:15 PM - 5:45 PM 1D (141+142)

座長:三宅秀人(三重大),片山竜二(東北大),熊谷義直(農工大)

4:45 PM - 5:00 PM

[15p-1D-9] Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer

〇Kazunobu Kojima¹, Yusuke Tsukada², Erika Furukawa¹, Makoto Saito^1,2, Yutaka Mikawa², Shuichi Kubo², Hirotaka Ikeda², Kenji Fujito², Akira Uedono³, Shigefusa Chichibu¹ (1.Tohoku Univ., 2.Mitsubishi chemical corp., 3.Univ. of Tsukuba)

Keywords:GaN