[15p-2J-1~10] Forefront of research on atomic and nano-scaled functionalities in oxides

[15p-2J-2] Room-temperature epitaxy engineering and innovation of thin films on atomically controlled substrates

〇Mamoru Yoshimoto¹ (1.Tokyo Tech.)

Keywords:epitaxial film,wide-gap semiconductor,oxide

Epitaxial growth of oxide films at lower temperatures is favored to obtain sharp interfaces and flat surfaces which are of advantage to construct high-quality electronic devices, and also is expected to result in novel development of unequilibrium structure and new electronic functionalization. In this talk we briefly review the main achievements of our research group on room-temperature synthesis of epitaxial oxide thin films (ZnO, or Ga2O3) on the atomically controlled substrates.