[15p-2M-1~11] Quantum Silicon Technology from the ground up

[15p-2M-10] Quantum control of an electron spin in a Si/SiGe quantum dot

〇Erika Kawakami¹, Pasquale Scarlino¹, Thibaut Jullien¹, Dan Ward², Don Savage², Max Lagally², Viatcheslav Dobrovitski³, Mark Friesen², Susan Coppersmith², Mark Eriksson², Lieven Vandersypen¹ (1.Delft Univ., 2.Wisconsin Univ., 3.Ames Lab.)

Keywords:quantum dot,spin,Si

We experimentally demonstrated that an electron spin in a Si/SiGe quantum dot serves as a high-quality qubit. An average single qubit gate fidelity of an electron spin in a Si/SiGe quantum dot is measured to be 99 % via randomized benchmarking. This fidelity is high enough to realize a feasible quantum control. We also measured the coherence time up to 400 us using dynamical decoupling.