The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

8 Plasma Electronics » 8.7 Plasma phenomena, emerging area of plasmas and their new applications

[15p-2Q-1~17] 8.7 Plasma phenomena, emerging area of plasmas and their new applications

Tue. Sep 15, 2015 1:45 PM - 6:15 PM 2Q (231-1)

座長:竹内 希(東工大),明石 治朗(防衛大)

6:00 PM - 6:15 PM

[15p-2Q-17] Indium Implantation onto Zeolite for Development of Catalysts

〇Satoru Yoshimura1, Yoshihiro Nishimoto1, Masato Kiuchi1,2, Makoto Yasuda1 (1.Osaka Univ., 2.AIST)

Keywords:Indium,Zeolite

Chemical substances that contain both indium (In) and silicon (Si) in close proximity are known to catalyze certain organic chemical reactions. The implantation of In onto zeolite which includes Si atoms was carried out by a low-energy mass-selected ion beam system and a pulse arc plasma process for the possible development of novel catalysts. The measurement of sample surface of the In implanted zeolite revealed that In was successfully implanted. In addition, the In implanted zeolite by the plasma process was capable of catalyzing an organic chemical reaction (i.e., Friedel-Crafts alkylation).