2:00 PM - 2:15 PM
△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism
Keywords:transition metal dichalcogenide,large area synthesis,growth mechanism
Recently, transition metal dichalcogenide (TMD) has attracted intense attention due to its atomically thin 2D sheet structure and excellent semiconducting properties. On purpose to grow high quality and large area monolayer tungsten disulfide (WS2), systematic investigations were carried out. Based on the precise adjustment of growth conditions, monolayer WS2 with relatively large domain size (60 μm) has been synthesized. Furthermore, photoluminescence (PL) intensity mapping reveals that the large domain size of WS2 has uniform and bright PL intensity, indicating high quality WS2 can be grown by out method.