[15p-2U-2~11] 17.1 Growth technology

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

〇TOMOYUKI TAKAHASHI¹, Toshiaki Kato¹, Toshiro Kaneko¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

Keywords:transition metal dichalcogenide,large area synthesis,growth mechanism

Recently, transition metal dichalcogenide (TMD) has attracted intense attention due to its atomically thin 2D sheet structure and excellent semiconducting properties. On purpose to grow high quality and large area monolayer tungsten disulfide (WS₂), systematic investigations were carried out. Based on the precise adjustment of growth conditions, monolayer WS₂ with relatively large domain size (60 μm) has been synthesized. Furthermore, photoluminescence (PL) intensity mapping reveals that the large domain size of WS₂ has uniform and bright PL intensity, indicating high quality WS₂ can be grown by out method.