1:30 PM - 1:45 PM
▲ [15p-4F-2] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET
Keywords:diamond,FET
Presentation information
Oral presentation
6 Thin Films and Surfaces » 6.2 Carbon-based thin films
[15p-4F-1~25] 6.2 Carbon-based thin films
Tue. Sep 15, 2015 1:15 PM - 8:00 PM 4F (438)
座長:小山 和博(デンソー),齊藤 丈靖(大阪府立大),嘉数 誠(佐賀大)