[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1] Investigation of Si-based Peltier devices for cooling power semiconductors

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ., 2.Mazda Motor Corp.)

Keywords:Silicon,Peltier device,Power devices

In order to apply Peltier devices for a cooling of power devices, both of high Seebeck coefficient and high thermal conductivity are required. We focused on silicon (Si) as a base material because of its process technologies are already matured. Therefore, we fabricated a bulk Si-based Peltier device which consists of p/n blocks of Si single-crystals. Because the heat transfer depended on both of intensity and sign of current in this device, we confirmed that this Si device operates as Peltier device. Now we investigate 3D integration in power devices.