[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama University, 2.JAEA, 3.Sanken Electric Co.)

Keywords:SiC,Gamma-rays,Elevated Temperature

本研究では高温下でのガンマ線照射がMOS界面へ与える影響に関して詳細な知見を得るため，SiC MOSキャパシタを150 ^oCでガンマ線照射し，MOSキャパシタの容量ー電圧特性の変化からその影響を調べた．