The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方 泰斗(埼玉大)

9:30 AM - 9:45 AM

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

〇Hitoshi Arai1, Hiroshi Nohira1 (1.Tokyo City Univ.)

Keywords:SiC,oxidation process,XPS