The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方 泰斗(埼玉大)

9:45 AM - 10:00 AM

△ [16a-1A-4] A study on evaluation technique of SiO2/SiC interface using super-higher-order nonlinear dielectric microscopy

〇Norimichi Chinone1, Ryoji Kosugi2, Yasunori Tanaka3, Shinsuke Harada2, Hajime Okumura2, Yasuo Cho1 (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

Keywords:SiO2/SiC interface,SPM,SHO-SNDM