The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方 泰斗(埼玉大)

10:15 AM - 10:30 AM

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

〇Yuki Fujino1, Koji Kita1 (1.The Univ. of Tokyo)

Keywords:SiC,MOS interface,Transient measurement