[16a-1C-1~11] 13.5 Semiconductor devices and related technologies

[16a-1C-4] Dopant-Induced Interband Tunneling Current Enhancement

〇Michiharu Tabe¹, N. Tan H.¹, D. Moraru², L. T. Anh³, M. Manoharan³, T. Mizuno¹, H. Mizuta^3,4 (1.RIE Shizuoka Univ., 2.Shizuoka Univ., 3.JAIST, 4.Univ. of Southampton)

Keywords:Esaki diodes