Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1C (135)

座長:太田裕之(産総研)

11:15 AM - 11:30 AM

〇(M2)haruki kinoshita¹, Toru Kanazawa¹, Seiko Netsu¹, Yuichi Mishima¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Keywords:Compound semiconductor,multi gate,MOVPE