2015年 第76回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

12 有機分子・バイオエレクトロニクス » 12.4 有機EL・トランジスタ

[16a-1G-1~10] 12.4 有機EL・トランジスタ

2015年9月16日(水) 09:00 〜 11:45 1G (レセプションホール2)

座長:青山 哲也(理研)

11:15 〜 11:30

[16a-1G-9] The Increase of Organic Field Effect Transistor Mobility by Copper Electrodes Deposition at High Background Pressure

〇(D)Cuong Tran1, Heisuke Sakai1, Tatsuya Murakami1, Hideyuki Murata1 (1.Japan Advanced Inst. of Sci. and Tech.)

キーワード:Organic field effect transistor,High mobility

Organic field-effect transistor (OFETs) have been investigated for many years and it has been used widely in many applications such as flexible memory and sensors. Superior performance of OFETs with high mobility (μ) and low threshold voltage (VTH) has been important target in both academic and industrial research fields. Optimizing the gate insulator surface, using 2-layer S/D contact or applying high-k materials as gate insulator were used in order to get its higher performances. In this paper, we reported that the background pressure during copper electrodes deposition significantly affects to the mobility of OFETs.