[16a-1G-1~10] 12.4 有機EL・トランジスタ

▲ [16a-1G-9] The Increase of Organic Field Effect Transistor Mobility by Copper Electrodes Deposition at High Background Pressure

〇(D)Cuong Tran¹, Heisuke Sakai¹, Tatsuya Murakami¹, Hideyuki Murata¹ (1.Japan Advanced Inst. of Sci. and Tech.)

キーワード：Organic field effect transistor,High mobility

Organic field-effect transistor (OFETs) have been investigated for many years and it has been used widely in many applications such as flexible memory and sensors. Superior performance of OFETs with high mobility (μ) and low threshold voltage (V_TH) has been important target in both academic and industrial research fields. Optimizing the gate insulator surface, using 2-layer S/D contact or applying high-k materials as gate insulator were used in order to get its higher performances. In this paper, we reported that the background pressure during copper electrodes deposition significantly affects to the mobility of OFETs.