The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[16a-2B-1~9] 13.9 Optical properties and light-emitting devices

Wed. Sep 16, 2015 10:00 AM - 12:15 PM 2B (211-2)

座長:國本 崇(徳島文理大)

10:00 AM - 10:15 AM

[16a-2B-1] First-principles calculations for band edge absorption in Eu3+ doped La-F-O-S phosphors

〇Ryo Yoshimatsu1,2, Masahiro Okada1, Tadashi Ishigaki3, Koutoku Ohmi1,4, Shinta Watanabe5 (1.Tottori Univ., 2.Denka, 3.TiFREC, 4.TEDREC, 5.Nagoya Univ.)

Keywords:phosphor,CTS,first-principles calculation

We have reported on the luminescent properties of YSF:Eu and La3OF3S2:Eu for developing red phosphors with using charge transfer state(CTS). The relation between band edge absorption and calculation results was investigated about La-O-F-S host matrix materials by performing first-principles calculation.