[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16a-2D-10] High-spatial-resolution Measurement of Stress Relaxation Profile in Strained SiGe Nanowires on Ge Substrate by EBSP

〇Motohiro Tomita^1,2, Kazuma Takeuchi¹, Shotaro Yamamoto¹, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Res. Fellow PD, 3.GNC, AIST)

Keywords:semiconductor,strained SiGe,EBSP

In our previous study, we have reported that the electron backscattering pattern (EBSP) measurement is useful for evaluating the stress states in Si or SiGe nanostructures with high spatial resolution. However, it was difficult to evaluate the stress states in the SiGe nanowire whose width was less than 100 nm because the electrons filled up the SiGe nanostructure, especially sub-100 nm structure, by the high electron beam current and the sample drift was occurred by charge up effect. The electron beam irradiation was performed to saturate the charge up effect and reduce the sample drift prior to the measurement. As a result, we achieved to evaluate the one- or two-dimensional profile of the σ_xx and σ_yy stresses in the SiGe nanowire on Ge substrate whose structure size was 50 nm at minimum. We believe that the EBSP measurement was necessary to evaluate the stress distribution in Fin-FET structures.