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[16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs
Keywords:Silicon,Single electron Transistors,Dopant atom transistors
In the past decade, several experiments have reported on single-electron tunneling (SET) transport through single dopant in nanoscale transistors. Recently, we reported SET transport through dopant-cluster at low temperature. In this report, we show SET transport through dopant-cluster at high temperature (> 150 K) in narrow-channel transistors.