[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

〇(PC)Samanta Arup¹, Moraru Daniel², Yuki Takasu¹, Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ, 2.Faculty Eng, Shizuoka Univ)

キーワード：Silicon,Single electron Transistors,Dopant atom transistors

In the past decade, several experiments have reported on single-electron tunneling (SET) transport through single dopant in nanoscale transistors. Recently, we reported SET transport through dopant-cluster at low temperature. In this report, we show SET transport through dopant-cluster at high temperature (> 150 K) in narrow-channel transistors.