[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16a-2D-6] Characterization of Electron Field Emission from Multiply-Stacking Phosphorus Doped Si Quantum Dots

〇Daichi Takeuchi^1,2, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.JSPS Reseatch Fellow)

Keywords:electron emission,Si dot