[16a-2J-1~12] 3.9 Terahertz technologies

[16a-2J-8] Electrical property evaluation of transition metal doped GaSe crystals by liquid phase growth

〇Kohei Suzuki¹, Yohei Sato¹, Kensaku Maeda¹, Yutaka Oyama¹ (1.Tohoku Univ.)

Keywords:GaSe,Crystal growth,Impurity doping

GaSe crystals have high birefringence (n_o=2.9082, n_e=2.5676 @1.06μm), wide transparency (0.6~20μm), and large nonlinear optical coefficient (d₂₂ = 54 pm/V @10.6 μm). For these superior properties, these crystals can generate high efficiency THz wave via difference frequency generation under collinear phase matching. We have been growing GaSe crystals for the THz wave generation by the liquid phase epitaxy under controlled vapor pressure. In this study, transition metal doped GaSe crystals for the purpose of prevention of free carrier absorption were grown by the same growth method. These crystals were evaluated by in comparison with Non-dope GaSe crystals.