The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

8 Plasma Electronics » 8.5 nanotechnology.

[16a-2Q-1~9] 8.5 nanotechnology.

Wed. Sep 16, 2015 9:00 AM - 11:15 AM 2Q (231-1)

座長:野崎 智洋(東工大)

10:45 AM - 11:00 AM

[16a-2Q-8] Effects of Chemical Termination Using Ar/NO/F2 Gas on Surface nanostructures and Electrical Properties of Carbon Nanowalls

〇(P)HyungJun Cho1, Satomi Tajima1, Keigo Takeda1, Hiroki Kondo1, Kenji Ishikawa1, Makoto Sekine1, Mineo Hiramatsu2, Masaru Hori1 (1.Nagoya Univ., 2.Meijo Univ.)

Keywords:Carbon nanowalls,Chemical termination,Electrical Properties

Carbon nanowalls (CNWs), multiple graphene sheets grown vertically on the substrate, can modulate their electrical properties by terminating the graphene sheet edge with various gases. We have reported weak temperature dependence of electrical conductance of the CNWs synthesized using CH4/H2 plasma, without no impurity doping. The CNWs were synthesized by a radical injection-plasma enhanced CVD (RI-PECVD) system. This system consists of a parallel-plate very high frequency (VHF, 100 MHz) capacitively coupled plasma (CCP) region and a microwave (2.45 GHz) excited surface wave hydrogen plasma (H2 SWP) region. The VHF power was 400 W and the SWP power was 400 W, respectively. The CNWs were typically synthesized on the thermally-grown SiO2 (100 nm) film on Si wafers with no catalysts. In this study, changes in chemical bonding structures of the CNWs before and after exposures of fluorine (F) radicals providing using Ar/NO/F2 gas mixture were investigated. Furthermore, morphology, crystallinity, and electrical conductivity were also investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Hall measurement, respectively