[16a-4A-1~9] 9.3 Nanoelectronics

△ [16a-4A-4] Electrostatic control of the tunnel-magnetoresistance in a Co/Al/Co-single-electron transistor

〇(M1)Ayumu Tanaka¹, Ryusuke Kobayashi¹, Naoki Tsujimichi¹, Hiroshi Shimada¹ (1.Univ. of Electro-Cummunications)

Keywords:single-electron transistor,tunnel-magnetoresistance,spin accumulation

In a ferromagnet/superconductor/ferromagnet single-electron transistor (SET), an interplay between the spin accumulation in the superconducting island and the charging effect is expected. In order to explore this effect, we have fabricated a Co/Al/Co-SET with an ideal structure and demonstrated that the tunnel-magnetoresistance ratio of this device is electrostatically controlled with the application of a gate voltage.