[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-11] AlGaN/GaN HEMT Properties on 200mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Kiyotaka Miyano¹, Yasushi Iyechika¹, Hideshi Takahashi¹, Yusuke Sato¹, Shinichi Mitani¹ (1.Nuflare Technology)

Keywords:Nitride semiconductor,MOCVD,HEMT

AlGaN/GaN HEMT properties on 200mm Si wafer by Fast Rotating Single-Wafer MOCVD were reported. The crystallinity of 5μm-thick crack-free GaN on Si was evaluated using XRC. FWHM of GaN(002) and (102) were about 250 and 300 arcsec, respectively. The uniformity of Al fraction in barrier AlGaN was ±0.6%. The electron mobility of HEMT was about 2000cm²/V-s. Newly developed fast rotating single-wafer MOCVD is promissing tool for next generation power devices.