[16a-4E-9~12] 7.3 Micro/Nano patterning and fabrication

△ [16a-4E-9] Development of Transmission Grating of EUV Interference Lithography for12.5 nm HP EUV Resist Evaluation

〇(M1)Yuki Fukuda¹, Tsubasa Fukui¹, Hirohito Tannino¹, Tetsuo Harada¹, Takeo Watanabe¹ (1.Univ. of Hyogo)

Keywords:semiconductor,EUV

Extreme lithography of ultraviolet rays (EUVL) is expected as a leading candidate of next generation semiconductor fine processing technology from 2017.We depend on this EUV intervention light exposure method so far, and it's line width hp 15 nm, formation has been achieved pattern. The transmission grating is most important about this intervention lithography. A regist of the 12.5 nm is advancing making of a transmission grating for the purpose of evaluation pattern at present. I do electron beam drawing of only on the diffraction grating by gl3002T that is the organic positive type regist.