[16a-PA2-1~60] 17 Nanocarbon Technology（Poster）

[16a-PA2-40] Electronic transport in graphene on hBN with multi-atomic vacancies

〇Tomoaki Kaneko^1,2, Takahisa Yamasaki^1,2,3 (1.NIMS, 2.MARCEED, 3.IIS, Univ. of Tokyo)

Keywords:graphene,hBN,DFT-NEGF

Hexagonal boron nitride (hBN) is known as good substrate for graphene device. But, a good performance can be obtained only on high quality hBN. In this study, we investigate the electronic structure and transport properties of graphene on hBN with triangular multi-atomic vacancies which are observed in TEM measurement.