[16a-PA2-1~60] 17 Nanocarbon Technology（Poster）

△ [16a-PA2-48] High performance thin film transistors using DNA-wrapped semiconducting single-wall carbon nanotubes

〇Yuki kuwahara¹, Fumiyuki Nihey², Shigekazu Ohmori¹, Takeshi Saito¹ (1.AIST, 2.NEC)

Keywords:Carbon nanotube,Thin film transistor,separation

Thin film transistors (TFTs) were fabricated by using DNA-wrapped semiconducting CNTs (DNA-CNTs). Semiconducting SWCNTs were enriched by using ion exchange chromatography (IEX) for the device fabrication. TFTs with the on/off ratio of around 10⁶ and carrier mobility of 10 cm²/Vs were successfully fabricated with IEX-processed DNA-CNTs. The comparison of the on/off ratios of TFTs before and after IEX at the same mobility indicated that TFTs after IEX possess higher values than that before IEX, which indicates that the enrichment process with IEX method sufficiently improves the performance of TFTs due to the reduction of metallic CNTs pathway in the transistor channel.