2:15 PM - 2:30 PM
△ [16p-1G-5] Fabrication of printed organic complementary circuits with bilayer structure
Keywords:integrated,organic transisitor,complementary
Organic Thin-Film Transistors (OTFTs) based on printing method have been achieve great progress in a few years. Fabrication of integrated circuits using complementary constitution is very important challenge for achieving low-cost RFID tags, flexible sensor and large area application since complementary circuits can minimize power consumption and circuits area. However, there are many problems to realize a complementary circuit using printing processes. They are surface modification process of source / drain electrodes and performance of n-type OTFTs.
In this work we fabricated layered structure complementary inverter circuits using printed electrodes and semiconductors. We have succeeded in treating the optimal electrode surface modification on p-type and n-type, respectively. Furthermore, by using top-gate , bottom-contact structure in n-type, we have also succeeded in achieving great electrical performances. The estimated field-effect mobility and VTH in n-type OTFT were 0.2 cm2/Vs, 1.6 V at operation voltage 10 V. In order to check the switching speed of the inverters based on layered structure OTFTs, a RO consisting of 3 stages with a buffer was measured. We can obtain the RO operate from 3 to 10 V, confirming that the layered structure OTFTs could be used in low voltage driven electronic system. The oscillating frequency can be achieved from the following: oscillating frequency = 1/ (2*N*SD). Here, SD is stage delay times for the output to change, and N is the number of delay stages in the loop. The SD, which is estimated from the characteristic is 0.93 ms.
In this work we fabricated layered structure complementary inverter circuits using printed electrodes and semiconductors. We have succeeded in treating the optimal electrode surface modification on p-type and n-type, respectively. Furthermore, by using top-gate , bottom-contact structure in n-type, we have also succeeded in achieving great electrical performances. The estimated field-effect mobility and VTH in n-type OTFT were 0.2 cm2/Vs, 1.6 V at operation voltage 10 V. In order to check the switching speed of the inverters based on layered structure OTFTs, a RO consisting of 3 stages with a buffer was measured. We can obtain the RO operate from 3 to 10 V, confirming that the layered structure OTFTs could be used in low voltage driven electronic system. The oscillating frequency can be achieved from the following: oscillating frequency = 1/ (2*N*SD). Here, SD is stage delay times for the output to change, and N is the number of delay stages in the loop. The SD, which is estimated from the characteristic is 0.93 ms.