2015年 第76回応用物理学会秋季学術講演会

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13 半導体 » 13.9 光物性・発光デバイス

[16p-2B-1~9] 13.9 光物性・発光デバイス

2015年9月16日(水) 13:45 〜 16:00 2B (211-2)

座長:小泉 淳(阪大)

14:45 〜 15:00

[16p-2B-5] Preparation of green-emitting beta-sialon-in-glass for laser lighting

Qiangqiang Zhu1,2, 〇Rong-Jun Xie1, Xiaojun Wang1, Takashi Takeda1, Takayuki Suehiro1, Naoto Hirosaki1 (1.NIMS, 2.USTC)

キーワード:phosphor-in-glass,laser lighting,nitride

Solid state laser lighting is superior to white light-emitting diodes in brightness, efficiency and color gamut, which requires thermally robust color converters that can be endured by high power blue laser irradiations. Regarding this, the application of the bulk phosphor-in-glass (PiG) luminescent materials could be of great interest. Here, we report a green-emitting PiG material by co-firing β-Sialon:Eu phosphor powders with the Eu2+ doped β-Sialon phosphor have been doped into ZnO-B2O3-BaO-Al2O3 glass frits at 630-660oC for 20-80 min in air. The microstructure, photoluminescence spectra, quantum efficiency, transmittance and thermal quenching of the β-Sialon:Eu PiG materials were investigated. The microstructural analysis indicated that to achieve the phosphor in glass (PiG) material with green-lighting emission for high power blue laser excitation. The PiG sample contained 5 wt % β-Sialon:Eu phosphor powders were uniformly dispersed in the glass matrix without any interfacial reactions. The luminescence efficiency and transparency of the PiG materials were largely dependent on the phosphor concentration, firing temperature and dwell time. Under the blue laser excitation, the optimized PiG sample consisting of 5 w% β-Sialon:Eu showed a linear relationship between the luminous flux and the incident laser power when the blue laser flux density was below 0.7 W/mm2, indicating its potential applications in solid state laser lighting.