[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-7] Electronic structure calculation of Si polymorphs by TE-TB method

〇Shinya Nishino¹, Takeo Fujiwara², Susumu Yamamoto³, Takashi Suzuki¹, Minoru Ikeda⁴, Yasuaki Ohtani¹ (1.ARGO GRAPHICS Inc., 2.The University of Tokyo, 3.Tokyo University of Technology,, 4.NIMS)

Keywords:tight binding method,Si polymorphs