[16p-2E-1~9] 3.13 Semiconductor optical devices

[16p-2E-6] Effect on High Frequency Characteristics by Thinner Barrier Layer in GaP Strain-Compensated InAs/GaAs Quantum Dot Laser

〇Takeo Kageyama¹, Katsuyuki Watanabe², Vo Quoc Huy², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.QD Laser)

Keywords:quantum dot,semiconductor laser,strain compensation