[16p-2E-1~9] 3.13 Semiconductor optical devices

[16p-2E-9] Quantum dot optical gain modulator integrated with semiconductor optical amplifier for T-Band Optical Communication

〇Toshifumi Emori^1,2, Naokatsu Yamamoto¹, Kouichi Akabane¹, Toshimasa Umezawa¹, Atsushi Matsumoto¹, Tetsuya Kawanishi^1,3, Katsuki Watanabe^1,2, Hiroshi Takai² (1.NICT, 2.Denki Univ., 3.Waseda Univ.)

Keywords:optical modulator,semiconductor optical amplifier

Pioneering optical frequency resources is essential to enhance a photonic network capacity. Currently, we have focused on a use of a 1.0-1.26 μm wavelength band (Thousand-band: T-band) and 1.26-1.36 μm wavelength band (O-band) as the novel optical frequency resources for the optical communications. Semiconductor quantum dot (QD) structure is expected to become attractive optical gain material for high-performance and ultra-broadband photonic ICT devices used in the T+O band. In this paper, we successfully developed a monolithically integrated QD optical gain modulator (OGM) with a semiconductor optical amplifier operating in T-band. Using the optical amplifier section, it is clearly found that an insertion loss of the device can be compensated. A Gbps-order optical gain modulation can also be achieved using the newly developed QD-OGM/SOA device.