[16p-2J-1~12] 3.9 Terahertz technologies

[16p-2J-12] Terahertz Detection in Double-Graphene-Layer Heterostructure

〇(M2)ARNOLD STEVANUS¹, STEPHANE BOUBANGA TOMBET¹, DEEPIKA YADAV¹, TAKAYUKI WATANABE¹, VICTOR RYZHII^1,2, TAIICHI OTSUJI¹ (1.RIEC Tohoku Univ., 2.UHF Semiconductor Electronics Inst)

Keywords:Double-Graphene-Layer Heterostructures,Terahertz Detection

We report on experimental observation of terahertz detection in a double graphene layer heterostructure (DGL) that consist of two independently contacted graphene electrodes separated by a thin hexa-Boron Nitride (h-BN) barrier layer. The bias voltages/doping causes the inter-graphene-layer population inversion with the possibility of photon-assisted resonant-tunneling transitions between the conduction bands and valence bands of the two graphene layers. We demonstrate that this can enable the realization of devices such as a terahertz detectors.