The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[16p-2Q-1~13] 8.3 deposition of thin film and surface treatment

Wed. Sep 16, 2015 1:45 PM - 5:00 PM 2Q (231-1)

座長:荻野 明久(静岡大)

1:45 PM - 2:00 PM

[16p-2Q-1] Diamond growth with pulsed-microwave plasma chemical vapor deposition

〇Hideaki Yamada1, Akiyoshi Chayahara1, Yoshiaki Mokuno1 (1.AIST)

Keywords:diamond,microwave plasma CVD

Aiming at improvement in efficiency of the growth, we have studied pulse modulated microwave plasma CVD. Pulse modulation is expected to suppress the gas temperature, and stabilize the growth environment with keeping or even enhanced growth rate. We have observed that intensity of OES from the discharge region is increased by the pulse-modulation, which indicates the expected effect.