[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

[16p-3A-11] Direct Observations of Magnetic Proximity Effect in Graphene/Magnetic Oxide Junctions by Spin-polarized Metastable Deexcitation Spectroscopy

〇Seiji Sakai^1,5, Sayani Majumdar², Shiro Entani¹, Pavel Avramov^3,1, Yuki Fukaya¹, Hiroshi Naramoto^1,4, Yasushi Yamauchi^5,1 (1.ASRC JAEA, 2.Aalto Univ., Finland, 3.Kyungpook Univ., Korea, 4.Univ. Tsukuba, 5.NIMS)

Keywords:graphene,magnetic proximity effect,magnetic oxides

Graphene and the related materials attract great attention as a candidate material for future electronics and spintronics. The understanding of the interface properties in graphene-based heterostructures is important for the effective manipulation of conduction electron spins necessary for the achieving spintronic applications. In this study, we will demonstrate proximity induced spin-polarization at the interfaces of the single layer graphene (SLG)/magnetic oxides (half-metallic La0.7Sr0.3MnO3) heterostructures. The electronic and spin-polarization states of the SLG located at the interface of the heterostructure were successfully elucidated by employing spin-polarized metastable-atom deexcitation spectroscopy (SPMDS).