[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [16p-3A-8] Temperature and Excitation power dependences of spin relaxation time in GaIn_0.36N_0.006AsSb_0.015/GaN_0.01AsSb_0.11/GaAs quantum well

〇Masaki Asakawa¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Lianhe Li², Jean-Christophe Harmand³, Shulong Lu⁴, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Leeds Univ., 3.LPN-CNRS, 4.SINANO-CAS)

Keywords:quantum wells,compound semiconductor,spin relaxation

Diluted nitride GaInNAs/GaAs quantum well(QW) structures are expected to be the light source for a long-wavelength-range diode laser. The use of Sb was found to help maintain a 2D growth mode at high In and N compositions and to improve the QW optical properties. By adding GaNAsSb intermediate barriers, 1.61 µm emission from a GaInNAsSb QW was achieved at room temperature. In this study, we report the temperature and excitation power dependence of the spin relaxation time in GaInNAsSb/GaNAsSb/GaAs QW observed by time-resolved pump and probe measurements. At 10-50 K, we have observed weak temperature dependence and the carrier density dependence showing that the spin relaxation is mainly governed by Bir-Aronov-Pikus process. At temperatures over 50 K, we have observed the strong temperature dependence and no carrier density dependence showing that the spin relaxation is mainly governed by D’yakonov-Perel’ process.