The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[16p-3A-1~11] 10.4 Semiconductors, organic, optical, and quantum spintronics

Wed. Sep 16, 2015 1:45 PM - 5:00 PM 3A (International Conference Room)

座長:大矢 忍(東大),植村 哲也(北大)

4:15 PM - 4:30 PM

[16p-3A-9] The comparison of spin relaxation in Be-doped GaAs with different Be concentrations at 10-77 K

〇Canyu Jiang1, Hao Wu1, Takanori Aritake1, Yoshiki Nakamura1, Pan Dai2, Shulong Lu2, Atsushi Tackeuchi1 (1.Waseda Univ., 2.SINANO-CAS)

Keywords:semiconductor,spin

We investigated the spin relaxation times of Be-doped GaAs with different Be concentration by time resolved spin dependent photoluminescence measurement at 10-77 K. As a result, we revealed that Bir-Aronov-Pikus process is dominant at 10-77 K. We also obtained shorter spin relaxation time with higher Be concentration at 50-77 K. The fact implies that Elliot-Yafet process is related at 50-77 K.