[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

〇Masato Shingo¹, Jianbo Liang², Naoteru Shigekawa², Manabu Arai³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka City Univ., 3.New Japan Radio)

Keywords:scanning internal photoemission microscopy,bonding,heterojunction