[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

[16p-4C-6] Ga₂O₃ Schottky Barrier Diodes with Drift Layers Grown by HVPE

〇Masataka Higashiwaki¹, Kohei Sasaki^2,1, Keita Konishi¹, Ken Goto², Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi² (1.NICT, 2.Tamura Corp., 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

Keywords:gallium oxide,Schottky barrier diode,halide vapor phase epitaxy

We fabricated Ga₂O₃ Schottky barrier diodes by using epitaxial wafers with Si-doped n^--Ga₂O₃ drift layers on single-crystal n⁺-Ga₂O₃ (001) substrates grown by halide vapor phase epitaxy and estimated their device characteristics at room temperature. The devices revealed excellent characteristics such as the specific on-resistance of 3.0 mΩ·cm², the ideality factor of 1.01-1.03, and the off-state breakdown voltage of about -500 V.