[16p-4E-1~11] 7.3 Micro/Nano patterning and fabrication

△ [16p-4E-5] Photoresist removal using hydrogen radical introducing trace amounts of oxygen gas

〇Masashi Yamamoto¹, Hironobu Umemoto², Keisuke Ohdaira³, Takashi Nishiyama⁴, Hideo Horibe⁴ (1.NIT, Kagawa College, 2.Shizuoka Univ., 3.JAIST, 4.Osaka City Univ.)

Keywords:photoresist removal,environmentally friendly,hydrogen radical

In general photoresist removal methods, there are some problems, such as heavy environmental burdens and some deterioration of device quality by charged particles in plasma. We have investigated the removal method using atomic hydrogen, which is an effective way to resolve the problems. But this rate is not as good as that obtained by using the general methods. As a break-through of that, this time we examined a novel method which use atomic hydrogen introducing small amount of oxygen gas. This result is the first to demonstrate the enhancement of the photoresist removal rate by introducing an appropriate amounts of oxygen.