Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-A21-1] Electrical Characteristics of Si/InGaP Heterojunctions for tandem solar cell application

〇Jianbo Liang¹, Li Chai¹, Shota Nishida¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

9:15 AM - 9:30 AM

[11a-A21-2] Device modeling of GaAsSb backward diodes on the basis of experimental evaluations and theoretical analysis

〇Kosuke Ono¹, Hisanari Fujita¹, Kaori Imori¹, Michihiko Suhara¹, Tsuyoshi Takahashi² (1.Tokyo Metro. Univ., 2.Fujitsu Lab.)

9:30 AM - 9:45 AM

[11a-A21-3] A Study on Process Damage during Fabrication of InSb HEMT

〇Takaomi Maeda¹, Daisuke Tsuji¹, Tatsuya Taketsuru¹, Sachie Fujikawa¹, Hiroki Fujishiro¹, Issei Watanabe², Yoshimi Yamashita², Akira Endoh², Shinsuke Hara², Akifumi Kasamatsu² (1.Tokyo Univ. of Science, 2.NICT)

9:45 AM - 10:00 AM

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO₂ using Bis(ethyl-methyl-amino)silane

〇Takayuki Suzuki¹, Yosuke Takigawa¹, Dongyan Zhang¹, Shimako Naito¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

10:00 AM - 10:15 AM

△ [11a-A21-5] InGaAs-HEMTs with Slant Field Plate Structures

〇Tomohiro Yoshida¹, Shinya Hatakeyama¹, Nana Yasukawa¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[11a-A21-6] Reduction effect of metal subcollector on thermal resistance for transferred-substrate InP HBTs

〇Yuta Shiratori^1,², Takuya Hoshi^1,², Norihide Kashio^1,³, Kenji Kurishima^1,², Eiji Higurashi⁴, Hideaki Matsuzaki^1,² (1.NTT Corp., 2.NTT Device Technology Labs., 3.NTT Device Innovation Center, 4.Univ. of Tokyo)

10:45 AM - 11:00 AM

[11a-A21-7] InP-based Double Heterojunction Bipolar Transistors Fabricated on SiC wafer by Atomic Diffusion Bonding Method

〇Masataka Watanabe¹, Masaki Yanagisawa¹, Katsumi Uesaka¹, Mitsuru Ekawa¹, Hajime Shoji¹ (1.Sumitomo Electric Industries)

11:00 AM - 11:15 AM

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

〇Hiroyuki Matsushima¹, Hiroyuki Okino¹, Kazuhiro Mochizuki¹, Renichi Yamada¹ (1.Hitachi CRL)

11:15 AM - 11:30 AM

[11a-A21-9] Interface Characterization of 4H-SiC MOSFETs by Pulse I-V Measurements

〇KOSUKE ISONO¹, HIROSHI YANO^1,², TAKASHI FUYUKI¹ (1.NAIST, 2.Univ. Tsukuba)

11:30 AM - 11:45 AM

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

〇Yuan Bu¹, Norifumi Kameshiro¹, Akio Shima¹, Ren-ichi Yamada¹, Yasuhiro Shimamoto¹ (1.Hitachi Ltd.)

11:45 AM - 12:00 PM

[11a-A21-11] High Accuracy Equivalent Circuit Model for GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Tatsuo Morita², Nobuyuki Otsuka², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic)

Session information

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

[11a-A21-1] Electrical Characteristics of Si/InGaP Heterojunctions for tandem solar cell application

[11a-A21-2] Device modeling of GaAsSb backward diodes on the basis of experimental evaluations and theoretical analysis

[11a-A21-3] A Study on Process Damage during Fabrication of InSb HEMT

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO₂ using Bis(ethyl-methyl-amino)silane

△ [11a-A21-5] InGaAs-HEMTs with Slant Field Plate Structures

[11a-A21-6] Reduction effect of metal subcollector on thermal resistance for transferred-substrate InP HBTs

[11a-A21-7] InP-based Double Heterojunction Bipolar Transistors Fabricated on SiC wafer by Atomic Diffusion Bonding Method

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

[11a-A21-9] Interface Characterization of 4H-SiC MOSFETs by Pulse I-V Measurements

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

[11a-A21-11] High Accuracy Equivalent Circuit Model for GIT Bi-directional Switch

Authentication

Session information

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

[11a-A21-1] Electrical Characteristics of Si/InGaP Heterojunctions for tandem solar cell application

[11a-A21-2] Device modeling of GaAsSb backward diodes on the basis of experimental evaluations and theoretical analysis

[11a-A21-3] A Study on Process Damage during Fabrication of InSb HEMT

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO2 using Bis(ethyl-methyl-amino)silane

△ [11a-A21-5] InGaAs-HEMTs with Slant Field Plate Structures

[11a-A21-6] Reduction effect of metal subcollector on thermal resistance for transferred-substrate InP HBTs

[11a-A21-7] InP-based Double Heterojunction Bipolar Transistors Fabricated on SiC wafer by Atomic Diffusion Bonding Method

△ [11a-A21-8] Analysis of Charge Density Instability in SiC-PN Diodes by measuring capacitance

[11a-A21-9] Interface Characterization of 4H-SiC MOSFETs by Pulse I-V Measurements

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

[11a-A21-11] High Accuracy Equivalent Circuit Model for GIT Bi-directional Switch

Authentication

△ [11a-A21-4] AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO₂ using Bis(ethyl-methyl-amino)silane