Session information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[11a-A27-1] [Young Scientist Presentation Award Speech] Fabrication and Electrical Properties of Nanogap Electrodes Using Semiconductor Process

〇Yasuhito Yoshimizu¹, Yusuke Tanaka¹, Hiroshi Tomita¹ (1.TOSHIBA Corp.)

9:15 AM - 9:30 AM

△ [11a-A27-2] Planarization of SiC wafers by use of a rotating Pt electrode

〇Tomoki Akai¹, Kentaro Imamura¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

9:30 AM - 9:45 AM

△ [11a-A27-3] Investigation of Phonon Deformation Potentials in SiGe with High Ge Concentration

〇Kazuma Takeuchi¹, Daisuke Kosemura¹, Shotaro Yamamoto¹, Motohiro Tomita^1,³, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

9:45 AM - 10:00 AM

△ [11a-A27-4] Evaluation of Anisotropic Biaxial Stress in Mesa-Shaped SiGe Nanostructure with High Ge Concentration

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Motohiro Tomita^1,³, Daisuke Kosemura¹, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

10:00 AM - 10:15 AM

△ [11a-A27-5] Evaluation of Stress Relaxation Profile in Entire-Ge-Concentration-Range Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

〇(D)Motohiro Tomita^1,², Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS DC, 3.GNC, AIST)

10:15 AM - 10:30 AM

△ [11a-A27-6] Concentration of hydrogen and splitting water using silicon nanoparticle

〇shinsuke matsuda¹, yuki kobayashi¹, tomoki akai¹, kentaro imamura¹, hikaru kobayashi¹ (1.ISIR Osaka Univ.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [11a-A27-7] Relationship between Ag Coverage and Signal Enhancement In the Raman Analysis of the Strained-Si Surface

〇Takahiro Kijims¹, Shotaro Yamamoto¹, Ryo Yokogawa¹, Kazuma Takeuchi¹, Tatsumi Murakami¹, Daisuke Kosemura¹, Atsushi Ogura¹ (1.Meiji Univ.)

11:00 AM - 11:15 AM

▼ [11a-A27-8] Band Bending Model Reproducing Si(111) Hole Subband Levels Measured by ARPES

〇Idayu Nur¹, Sakura Nishino Takeda¹, Takeshi J. Inagaki¹, Hiroshi Daimon¹ (1.NAIST)

11:15 AM - 11:30 AM

△ [11a-A27-9] Reproducibility of laser-based soft-error simulation employing two-photon absorption process

〇Hiroaki Itsuji^1,², Daisuke Kobayashi^1,², Kazuyuki Hirose^1,² (1.Univ. Tokyo, 2.ISAS/JAXA)

11:30 AM - 11:45 AM

△ [11a-A27-10] Tolerance for Single Event Effects of Tunnel FET

〇Yan Wu¹, Kohta Yamamoto¹, Daisuke Ieki¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

11:45 AM - 12:00 PM

△ [11a-A27-11] Film Thickness Dependence of the Micro-Wall Solar Cell with Electric-Field Effect

〇(M1)Kohei Oki¹, Wakamiya Shota¹, Heya Akira¹, Matsuo Naoto¹ (1.Univ. of Hyogo)

12:00 PM - 12:15 PM

[11a-A27-12] Characterization of Electron Field Emission from Multiply-Stacking Si Quantum Dots

〇Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL, 3.Hiroshima Univ.)

12:15 PM - 12:30 PM

[11a-A27-13] Effect of P-Doping on Photoluminescence Properties of Si Quantum Dots with Ge Core

〇Keigo Kondou¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the official guidebook which will be distributed at the venue.
The password will be sent to all JSAP members in September 2015.

Please log in with your participant account.
» Participant Log In

▲