Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-A27-1] [Young Scientist Presentation Award Speech] Fabrication and Electrical Properties of Nanogap Electrodes Using Semiconductor Process

〇Yasuhito Yoshimizu¹, Yusuke Tanaka¹, Hiroshi Tomita¹ (1.TOSHIBA Corp.)

9:15 AM - 9:30 AM

△ [11a-A27-2] Planarization of SiC wafers by use of a rotating Pt electrode

〇Tomoki Akai¹, Kentaro Imamura¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

9:30 AM - 9:45 AM

△ [11a-A27-3] Investigation of Phonon Deformation Potentials in SiGe with High Ge Concentration

〇Kazuma Takeuchi¹, Daisuke Kosemura¹, Shotaro Yamamoto¹, Motohiro Tomita^1,³, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

9:45 AM - 10:00 AM

△ [11a-A27-4] Evaluation of Anisotropic Biaxial Stress in Mesa-Shaped SiGe Nanostructure with High Ge Concentration

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Motohiro Tomita^1,³, Daisuke Kosemura¹, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

10:00 AM - 10:15 AM

△ [11a-A27-5] Evaluation of Stress Relaxation Profile in Entire-Ge-Concentration-Range Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

〇(D)Motohiro Tomita^1,², Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS DC, 3.GNC, AIST)

10:15 AM - 10:30 AM

△ [11a-A27-6] Concentration of hydrogen and splitting water using silicon nanoparticle

〇shinsuke matsuda¹, yuki kobayashi¹, tomoki akai¹, kentaro imamura¹, hikaru kobayashi¹ (1.ISIR Osaka Univ.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [11a-A27-7] Relationship between Ag Coverage and Signal Enhancement In the Raman Analysis of the Strained-Si Surface

〇Takahiro Kijims¹, Shotaro Yamamoto¹, Ryo Yokogawa¹, Kazuma Takeuchi¹, Tatsumi Murakami¹, Daisuke Kosemura¹, Atsushi Ogura¹ (1.Meiji Univ.)

11:00 AM - 11:15 AM

▼ [11a-A27-8] Band Bending Model Reproducing Si(111) Hole Subband Levels Measured by ARPES

〇Idayu Nur¹, Sakura Nishino Takeda¹, Takeshi J. Inagaki¹, Hiroshi Daimon¹ (1.NAIST)

11:15 AM - 11:30 AM

△ [11a-A27-9] Reproducibility of laser-based soft-error simulation employing two-photon absorption process

〇Hiroaki Itsuji^1,², Daisuke Kobayashi^1,², Kazuyuki Hirose^1,² (1.Univ. Tokyo, 2.ISAS/JAXA)

11:30 AM - 11:45 AM

△ [11a-A27-10] Tolerance for Single Event Effects of Tunnel FET

〇Yan Wu¹, Kohta Yamamoto¹, Daisuke Ieki¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

11:45 AM - 12:00 PM

△ [11a-A27-11] Film Thickness Dependence of the Micro-Wall Solar Cell with Electric-Field Effect

〇(M1)Kohei Oki¹, Wakamiya Shota¹, Heya Akira¹, Matsuo Naoto¹ (1.Univ. of Hyogo)

12:00 PM - 12:15 PM

[11a-A27-12] Characterization of Electron Field Emission from Multiply-Stacking Si Quantum Dots

〇Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL, 3.Hiroshima Univ.)

12:15 PM - 12:30 PM

[11a-A27-13] Effect of P-Doping on Photoluminescence Properties of Si Quantum Dots with Ge Core

〇Keigo Kondou¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Session information