Oral presentation

7 Beam Technology and Nanofabrication » 7.3 Micro/Nano patterning and fabrication

[11a-B2-1~10] 7.3 Micro/Nano patterning and fabrication

Wed. Mar 11, 2015 9:00 AM - 11:45 AM B2 (6B-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-B2-1] Optimization of F-Number for Desktop Liquid-Crystal-Display Exposure System

〇Toshiyuki Horiuchi¹, Soichiro Koyama¹, Hiroshi Kobayashi¹ (1.Tokyo Denki Univ.)

9:15 AM - 9:30 AM

[11a-B2-2] Computational study on 3-dimensonal exposure by Built-in lens mask lithography II

Naoki Ueda¹, Toshiki Tanaka¹, Hisao Kikuta¹, Hiroaki Kawata¹, Masaru Sasago¹, 〇Yoshihiko Hirai¹ (1.Osaka Pref. Univ.)

9:30 AM - 9:45 AM

[11a-B2-3] Reduction of power consumption by optimization of chamber structure and gas flow speed in ArF excimer laser for semiconductor lithography

〇Hiroyuki Ikeda¹, Akira Suwa¹, Hisakazu Katsuumi¹, Hiroaki Tsushima¹, Takahito Kumazaki¹, Akihiko Kurosu¹, Takeshi Ohta¹, Kouji Kakizaki¹, Takashi Matsunaga¹, Hakaru Mizoguchi¹ (1.Gigaphoton)

9:45 AM - 10:00 AM

[11a-B2-4] Synthesis of Au nanoparticles for surface-enhanced Raman scattering using photochemical reaction of synchrotron radiation

〇AKINOBU YAMAGUCHI¹, TAKESHI MATSUMOTO¹, IKUO OKADA², IKUYA SAKURAI², YUICHI UTSUMI¹ (1.Univ. of Hyogo, 2.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [11a-B2-5] EUV Mask Observations Using a Coherent EUV Scatterometry Microscope with a High-Harmonic-Generation Source (II)

〇Takahiro Fujino¹, Yusuke Tanaka¹, Tetsuo Harada¹, Yutaka Nagata², Takeo Watanabe¹, Hiroo Kinoshita¹ (1.Univ. of Hyogo, 2.RIKEN)

10:15 AM - 10:30 AM

△ [11a-B2-6] Development of EUV Polarizer System for Accurate Reflectance Measurement of an EUV collector mirror

〇Haruki Iguchi¹ (1.Univ. of Hyogo)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[11a-B2-7] Irradiation Effects of Proton Beam on the Surface of Polyvinylidene Difluoride Film

〇Hiroyuki Nishikawa¹, Hokuto Masuoka¹, Ryo Sano¹, Hidetaka Hayashi¹, Yasunari Maekawa² (1.Shibaura Inst. Tech., 2.JAEA)

11:00 AM - 11:15 AM

△ [11a-B2-8] Exposure Characteristics of New Negativ Electron Beam Polymer Resist with High-Sensitivity

〇Tomohiro Takayama¹, Shingo Ikeda¹, Kishimura Yukiko¹, Hironori Asada¹, Naoki Tugawa², Yosuke Akashika², Ryoichi Hoshino³ (1.Yamaguchi Univ., 2.NARD Inst., 3.Gluon Lab)

11:15 AM - 11:30 AM

△ [11a-B2-9] Dissolution Behavior of PMMA Resist in Development Process

〇Akihiro Konda¹, Hiroki Yamamoto¹, Masaki Mitsuyasu¹, Takahiro Kozawa¹, Shusuke Yoshitake² (1.ISIR Osaka Univ., 2.NuFlare Technology)

11:30 AM - 11:45 AM

[11a-B2-10] PMMA etching with high selectivity to polystyrene(PS)

〇Kazuma Shimomukai¹, Hiroaki Kawata¹, Masaaki Yasuda¹, Yoshihiko Hirai¹ (1.Osaka Pref Univ.)

Session information