Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[11a-C2-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Mar 11, 2015 9:00 AM - 12:30 PM C2 (6C-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-C2-1] Simulation Study of Light Trapping in Modulated Surface Textures

〇Takeshi Tayagaki¹, Yuko Kishimoto¹, Yusuke Hoshi², Noritaka Usami² (1.Kyoto Univ., 2.Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-C2-2] Nanostructure formation on textured Si substrates by colloidal lithography and its impact on solar cell properties

〇Yusuke Hoshi¹, Yuji Hirai², Noritaka Usami¹ (1.Nagoya Univ., 2.Chitose Inst. of Science and Tech.)

9:30 AM - 9:45 AM

[11a-C2-3] Fabrication of anti-reflection films using a spin-on-glass

〇Kouichi Murakami¹, Shuhei Miura¹, Kazutoshi Suzuki¹, Shinichi Noda¹, Masanari Inoue¹, Shuichi Nonomura¹ (1.Gifu Univ.)

9:45 AM - 10:00 AM

[11a-C2-4] Transparent conductive oxide substrates with textured morphology using silica particles and spin-on-glass

〇Shinichi Noda¹, Shuhei Miura¹, Kazutoshi Suzuki¹, Masanari Inoue¹, Kouichi Murakami¹, Shuichi Nonomura¹ (1.Gifu Univ.)

10:00 AM - 10:15 AM

[11a-C2-5] Thermal stability of a-Si films formed using liquid Si

〇(M1C)CHENG GUO¹, Keisuke Ohdaira¹, Hideyuki Takagishi², Tatsuya Shimoda¹ (1.JAIST, 2.Fukushima Univ)

10:15 AM - 10:30 AM

△ [11a-C2-6] Passivation properties of AlO_x thin film grown at low-temperature by a novel reaction supported mist CVD

〇Takayuki Uchida¹, Toshiyuki Kawaharamura², Shizuo Fujita¹, Takahiro Hiramatsu³, Hiroyuki Orita³ (1.Graduate School of Eng., Kyoto Univ., 2.Res. Inst., Kochi Univ. of Tech, 3.TMEIC)

10:30 AM - 10:45 AM

[11a-C2-7] Fabrication of AlOx film by a new aluminum source, and application for c-Si solar cell passivation

〇Kiyoshi Takahashi¹, Soichiro Todoroki², Shinsuke Miyajima² (1.Nippon Aluminum Alkyls, Ltd., 2.Graduate School of science and Engineering, Tokyo Tech.)

10:45 AM - 11:00 AM

[11a-C2-8] Void structures at a-Si:H/c-Si heterointerfaces: Application of an optical characterization method based on positron annihilation data

〇Nobuyuki Matsuki¹, Akira Uedono², Brian O'Rourke³, Nagayasu Oshima³ (1.Gifu Univ., 2.Tsukuba Univ., 3.AIST)

Break (11:00 AM - 11:15 AM)

11:15 AM - 11:30 AM

[11a-C2-9] Low temperature doping onto a-Si films by Cat-doping

〇Junichi Seto¹ (1.JAIST)

11:30 AM - 11:45 AM

[11a-C2-10] Optical loss in Cat-CVD SiNx/a-Si passivation with low surface recombination velocity

〇Koichi Koyama¹, Shigeki Terashima¹, Keisuke Ohdaira¹, Hideki Matsumura¹ (1.Jpn. Adv. Inst. Sci&Tech.)

11:45 AM - 12:00 PM

[11a-C2-11] Study on Chemical Properties of Cat-CVD SiNx/a-Si Stacked Passivation Layers Realizing Extremely Low Surface Recombination Velocity

〇Shigeki Terashima¹, Koichi Koyama¹, Keisuke Ohdaira¹, Hideki Matsumura¹ (1.Jpn. Adv. Inst. Sci&Tech.)

12:00 PM - 12:15 PM

▲ [11a-C2-12] Defect termination at the interfaces of Cat-CVD SiN_x/c-Si and SiN_x/P Cat-doped layer/c-Si structures

〇(D)Cham Trinh^1,², Koichi Koyama^1,², Keisuke Ohdaira^1,², Hideki Matsumura^1,² (1.JAIST, 2.JST CREST)

12:15 PM - 12:30 PM

[11a-C2-13] Improvement in the passivation quality of Cat-CVD a-Si/c-Si hetero-junction interface for Si(111) and Si(100) by the formation of ultra-thin oxide layers

〇(M2)Takafumi Oikawa¹, Keisuke Ohdaira^1,², Koichi Higashimine^1,², Hideki Matsumura^1,² (1.JAIST, 2.JST CREST)

Session information

[11a-C2-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

[11a-C2-1] Simulation Study of Light Trapping in Modulated Surface Textures

[11a-C2-2] Nanostructure formation on textured Si substrates by colloidal lithography and its impact on solar cell properties

[11a-C2-3] Fabrication of anti-reflection films using a spin-on-glass

[11a-C2-4] Transparent conductive oxide substrates with textured morphology using silica particles and spin-on-glass

[11a-C2-5] Thermal stability of a-Si films formed using liquid Si

△ [11a-C2-6] Passivation properties of AlO_x thin film grown at low-temperature by a novel reaction supported mist CVD

[11a-C2-7] Fabrication of AlOx film by a new aluminum source, and application for c-Si solar cell passivation

[11a-C2-8] Void structures at a-Si:H/c-Si heterointerfaces: Application of an optical characterization method based on positron annihilation data

[11a-C2-9] Low temperature doping onto a-Si films by Cat-doping

[11a-C2-10] Optical loss in Cat-CVD SiNx/a-Si passivation with low surface recombination velocity

[11a-C2-11] Study on Chemical Properties of Cat-CVD SiNx/a-Si Stacked Passivation Layers Realizing Extremely Low Surface Recombination Velocity

▲ [11a-C2-12] Defect termination at the interfaces of Cat-CVD SiN_x/c-Si and SiN_x/P Cat-doped layer/c-Si structures

[11a-C2-13] Improvement in the passivation quality of Cat-CVD a-Si/c-Si hetero-junction interface for Si(111) and Si(100) by the formation of ultra-thin oxide layers

Authentication

Session information

[11a-C2-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [11a-C2-6] Passivation properties of AlOx thin film grown at low-temperature by a novel reaction supported mist CVD

▲ [11a-C2-12] Defect termination at the interfaces of Cat-CVD SiNx/c-Si and SiNx/P Cat-doped layer/c-Si structures

Authentication

△ [11a-C2-6] Passivation properties of AlO_x thin film grown at low-temperature by a novel reaction supported mist CVD

▲ [11a-C2-12] Defect termination at the interfaces of Cat-CVD SiN_x/c-Si and SiN_x/P Cat-doped layer/c-Si structures