Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[11p-A21-1] Ohmic Electrode Formation for Diamond Semiconductors Using Ar Ion Beam Irradiation

〇Yuhei Seki¹, Yasusi Hoshino¹, Yasunao Saito¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

2:15 PM - 2:30 PM

[11p-A21-2] Surface Orientation Dependence of Crystalline Al₂O₃ Layer on (-201) and (010) Ga₂O₃

〇Takafumi Kamimura¹, Daivasigamani Krishnamurthy¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

2:30 PM - 2:45 PM

[11p-A21-3] Correlation between Al₂O₃ Crystalline Layer Thickness Deposited on (010) Ga₂O₃and Its Interface State Density

〇Takafumi Kamimura¹, Daivasigamani Krishnamurthy¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

2:45 PM - 3:00 PM

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors

〇ManHoi Wong¹, Kohei Sasaki^{2, 1}, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

3:00 PM - 3:15 PM

[11p-A21-5] Comparison of Etched AlGaN Surface between Neutral Beam Etching and Plasma Etching

〇ChangYong Lee¹, Aiko Higo², Cedric Thomas¹, Tadashi Shimmura³, Seiji Samukawa^1,^2,⁴ (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.PRC, Toshiba, 4.JST-CREST)

3:15 PM - 3:30 PM

[11p-A21-6] Recess-Gate AlGaN/GaN HEMT Structure by Neutral Beam Etching

〇ChangYong Lee¹, Akio Higo², Jitsuo Ohta³, Hiroshi Fujioka^3,⁴, Seiji Samukawa^1,^2,⁴ (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.IIS, Univ. of Tokyo, 4.JST-CREST)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[11p-A21-7] Temperature dependence on behavior of plasma-induced defects in n-GaN upon light irradiation

〇rikito orimo¹ (1.TMU)

4:00 PM - 4:15 PM

[11p-A21-8] ODLTS of the Ev+0.86eV hole trap observed in MOCVD n-GaN

〇(M1)Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol.)

4:15 PM - 4:30 PM

[11p-A21-9] Fabrication of ultra-thin nanostructures by Hydrogen Environment Anisotropic Thermal Etching

〇(M2)Ryo Kita¹, Hachia Ryo¹, Akihiko Kikuchi^1,² (1.Sophia Univ., 2.Sophia Nanotech.)

4:30 PM - 4:45 PM

[11p-A21-10] Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrate

〇(DC)Shintaro Kodama¹, Joel Asubar¹, Hirokuni Tokuda¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.Panasonic)

4:45 PM - 5:00 PM

[11p-A21-11] Improvement of DC characteristics of AlGaN/GaN HEMT by substrate transfer using Au-Au thermocompression bonding

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

5:00 PM - 5:15 PM

[11p-A21-12] High Temperature Characteristics in AlGaN/GaN Asymmetric Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

〇Narihiko Maeda^1,², Masanobu Hiroki², Satoshi Sasaki², Yuichi Harada² (1.Tokyo Univ. of Technology, 2.NTT Research Labs.)

Session information

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

[11p-A21-1] Ohmic Electrode Formation for Diamond Semiconductors Using Ar Ion Beam Irradiation

[11p-A21-2] Surface Orientation Dependence of Crystalline Al₂O₃ Layer on (-201) and (010) Ga₂O₃

[11p-A21-3] Correlation between Al₂O₃ Crystalline Layer Thickness Deposited on (010) Ga₂O₃and Its Interface State Density

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors

[11p-A21-5] Comparison of Etched AlGaN Surface between Neutral Beam Etching and Plasma Etching

[11p-A21-6] Recess-Gate AlGaN/GaN HEMT Structure by Neutral Beam Etching

[11p-A21-7] Temperature dependence on behavior of plasma-induced defects in n-GaN upon light irradiation

[11p-A21-8] ODLTS of the Ev+0.86eV hole trap observed in MOCVD n-GaN

[11p-A21-9] Fabrication of ultra-thin nanostructures by Hydrogen Environment Anisotropic Thermal Etching

[11p-A21-10] Electrical properties of AlGaN/GaN heterostructures grown on a step-etched substrate

[11p-A21-11] Improvement of DC characteristics of AlGaN/GaN HEMT by substrate transfer using Au-Au thermocompression bonding

[11p-A21-12] High Temperature Characteristics in AlGaN/GaN Asymmetric Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

Authentication

Session information

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

▲ [11p-A21-4] Planar Device Isolation for β-Ga2O3 Field Effect Transistors

Authentication

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors